Type Designator: IRFZ44
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 67(max) nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 920 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO220
IRFZ44 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFZ44 Datasheet (PDF)
..1. Size:859K international rectifier
irfz44.pdf 
PD - 94943IRFZ44PbF Lead-Free01/14/04Document Number: 91291 www.vishay.com1IRFZ44PbFDocument Number: 91291 www.vishay.com2IRFZ44PbFDocument Number: 91291 www.vishay.com3IRFZ44PbFDocument Number: 91291 www.vishay.com4IRFZ44PbFDocument Number: 91291 www.vishay.com5IRFZ44PbFDocument Number: 91291 www.vishay.com6IRFZ44PbFTO-220AB Package Outline
..2. Size:1540K vishay
irfz44 sihfz44.pdf
IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
..3. Size:1542K vishay
irfz44pbf sihfz44.pdf
IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
0.1. Size:382K international rectifier
irfz44zlpbf irfz44zpbf irfz44zspbf.pdf
PD - 95379AIRFZ44ZPbFIRFZ44ZSPbFFeatures Advanced Process TechnologyIRFZ44ZLPbF Ultra Low On-ResistanceHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating TemperatureD Fast SwitchingVDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 13.9mGDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
0.2. Size:325K international rectifier
irfz44s irfz44l.pdf
PD - 9.893AIRFZ44S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175C Operating Temperature RDS(on) = 0.028 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon
0.3. Size:327K international rectifier
auirfz44zstrl.pdf
PD - 97543AUIRFZ44ZAUTOMOTIVE GRADEAUIRFZ44ZSFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.13.9mTjmaxG Lead-Free, RoHS CompliantID51AS Automotive Qualified *DDescriptionDSpecifically
0.4. Size:145K international rectifier
irfz44vs irfz44vl.pdf
PD - 94050AIRFZ44VSIRFZ44VLHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 16.5m Fully Avalanche RatedG Optimized for SMPS ApplicationsID = 55ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilize advancedprocessing te
0.5. Size:226K international rectifier
irfz44vpbf.pdf
PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro
0.6. Size:229K international rectifier
irfz44v.pdf
PD - 93957AIRFZ44VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mWG Fast Switching Fully Avalanche RatedID = 55A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac
0.7. Size:226K international rectifier
irfz44npbf.pdf
PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex
0.8. Size:100K international rectifier
irfz44n.pdf
PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan
0.9. Size:334K international rectifier
irfz44nlpbf irfz44nspbf.pdf
IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D
0.10. Size:221K international rectifier
irfz44rpbf.pdf
PD - 94823IRFZ44RPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.028Gl Fully Avalanche Ratedl Drop in Replacement of the IRFZ44ID = 50*Afor Linear/Audio ApplicationsSl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from Internation
0.11. Size:96K international rectifier
irfz44e.pdf
PD - 91671BIRFZ44EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.023G Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefi
0.12. Size:52K international rectifier
irfz44n 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s
0.13. Size:153K international rectifier
irfz44r.pdf
PD - 93956IRFZ44RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.028G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ44 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a
0.14. Size:301K international rectifier
irfz44vzl irfz44vzpbf irfz44vzspbf.pdf
PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE
0.15. Size:150K international rectifier
irfz44epbf.pdf
PD - 94822IRFZ44EPbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.023 Fully Avalanche RatedG Lead-FreeID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area.
0.16. Size:274K international rectifier
auirfz44vzstrl.pdf
PD - 96354AUTOMOTIVE GRADEAUIRFZ44VZSHEXFET Power MOSFETFeaturesl Advanced Process Technology DV(BR)DSS60Vl Ultra Low On-ResistanceRDS(on) typ.9.6ml 175C Operating Temperaturel Fast Switching Gmax. 12ml Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS Compliant ID 57A l Automotive Qualified *DescriptionDSpecifically designed for Automo
0.17. Size:163K international rectifier
irfz44es irfz44el.pdf
PD - 9.1714IRFZ44ES/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating TemperatureRDS(on) = 0.023G Fast Switching Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve
0.18. Size:234K international rectifier
irfz44espbf.pdf
PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec
0.19. Size:151K international rectifier
irfz44ns irfz44nl.pdf
PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee
0.20. Size:273K international rectifier
auirfz44nl auirfz44ns.pdf
PD-96391AAUTOMOTIVE GRADEAUIRFZ44NSAUIRFZ44NLHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.17.5m 175C Operating Temperature G Fast SwitchingS ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDDescription
0.21. Size:320K international rectifier
auirfz44n.pdf
AUTOMOTIVE GRADE AUIRFZ44N Features HEXFET Power MOSFET Advanced Planar Technology VDSS Low On-Resistance 55V Dynamic dv/dt Rating RDS(on) max. 175C Operating Temperature 17.5m Fast Switching ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Desc
0.22. Size:580K international rectifier
auirfz44v.pdf
PD - 96415AUTOMOTIVE GRADEAUIRFZ44VHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Planar Technology 60Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.16.5ml 175C Operating TemperatureGl Fast SwitchingID 55Al Fully Avalanche RatedSl Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *DescriptionSD
0.23. Size:57K international rectifier
irfz44ns 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat
0.24. Size:52K philips
irfz44n 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s
0.25. Size:57K philips
irfz44ns 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat
0.26. Size:503K samsung
irfz44a.pdf
Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin
0.27. Size:815K vishay
irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S
0.28. Size:790K vishay
irfz44s irfz44l sihfz44s sihfz44l.pdf
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S
0.29. Size:1287K vishay
irfz44r sihfz44r.pdf
IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the
0.30. Size:1289K vishay
irfz44r irfz44rpbf sihfz44r.pdf
IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the
0.31. Size:382K infineon
irfz44zpbf irfz44zspbf irfz44zlpbf.pdf
PD - 95379AIRFZ44ZPbFIRFZ44ZSPbFFeatures Advanced Process TechnologyIRFZ44ZLPbF Ultra Low On-ResistanceHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating TemperatureD Fast SwitchingVDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 13.9mGDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
0.32. Size:226K infineon
irfz44vpbf.pdf
PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro
0.33. Size:150K infineon
irfz44npbf.pdf
PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely
0.34. Size:372K infineon
irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf
PD - 95947AIRFZ44VZPbFIRFZ44VZSPbFIRFZ44VZLPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 60V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12m Lead-FreeGDescriptionID = 57AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremel
0.35. Size:654K infineon
auirfz44vzs.pdf
AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed
0.36. Size:713K infineon
auirfz44z auirfz44zs.pdf
AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed
0.37. Size:234K infineon
irfz44espbf irfz44elpbf.pdf
PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec
0.38. Size:334K infineon
irfz44nspbf irfz44nlpbf.pdf
IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D
0.39. Size:301K infineon
irfz44vz irfz44vzs irfz44vzl.pdf
PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE
0.40. Size:252K lrc
lirfz44n.pdf
LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10
0.41. Size:1160K cn vbsemi
irfz44rp.pdf
IRFZ44RPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
0.42. Size:1792K cn vbsemi
irfz44es.pdf
IRFZ44ESwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
0.43. Size:910K cn vbsemi
irfz44vp.pdf
IRFZ44VPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
0.44. Size:824K cn vbsemi
irfz44npbf.pdf
IRFZ44NPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim
0.45. Size:1459K cn vbsemi
irfz44ns.pdf
IRFZ44NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source
0.46. Size:245K inchange semiconductor
irfz44vz.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44VZIIRFZ44VZFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
0.47. Size:205K inchange semiconductor
irfz44es.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
0.48. Size:246K inchange semiconductor
irfz44z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ZIIRFZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
0.49. Size:245K inchange semiconductor
irfz44v.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44V IIRFZ44VFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
0.50. Size:100K inchange semiconductor
irfz44n.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor
0.51. Size:246K inchange semiconductor
irfz44e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44E IIRFZ44EFEATURESStatic drain-source on-resistance:RDS(on) 23mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
0.52. Size:258K inchange semiconductor
irfz44zs.pdf
Isc N-Channel MOSFET Transistor IRFZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
0.53. Size:145K inchange semiconductor
irfz44cn.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor
0.54. Size:257K inchange semiconductor
irfz44vzs.pdf
Isc N-Channel MOSFET Transistor IRFZ44VZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
0.55. Size:257K inchange semiconductor
irfz44ns.pdf
isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
